OUR PEROVSKITE TECHNOLOGY
    Since 2009, organic-inorganic perovskite materials evolved exponentially in their photo-current conversion efficiency (PCE) reaching to 24.2% in less than 8 years exceling Si based solar cells that took 30 years to reach to similar PCE level. The enormous improvement in their PCE endowed perovskite materials as promising candidates for the next generation solar and LED technology materials. Until today, however, the stability of these materials, ambient environment processability and fabrication of devices are among the major challenges hampering commercialization of perovskite-based devices.
   Our technology provides a highly efficient and stable halide perovskite material that can be processed and produced in room environment conditions by using anion substitution & solvent treatment with low-cost processing steps. This technology provides robust and facile route for synthesizing high-quality perovskite thin films at a low temperature (120 oC), with high reproducibility, high-performance (PCE up to 20%), and stability under ambient conditions (more than 7500 hours) for production of optoelectronic devices. The technology also allows device fabrication by solution processing and deposition of the perovskite precursor compounds, from elements that are earth-abundant and readily available materials. The said halide perovskite material exhibits excellent and tunable optoelectronic properties for light-absorption, light-detection and light-emission. The photoactive halide perovskite material can be used to produce devices such as hetero-junction and tandem solar cells, photodetectors, light-emitting diodes, lasing devices. For instance, a solar cell can be fabricated by depositing perovskite between an electron (n-type) and hole extracting (p-type) and transporting layers of the photo-generated carriers in the device. Remarkably, a high device performance can be achieved by using both compact and mesoporous n-type materials deposited in ambient condition.
   The device can also be arranged in inverted device architectures in either planar or inverted device architecture. Typically, the perovskite thin film deposited forms a planar architecture with an n-type (such as titanium dioxide, TiO2 compact or mesoporous microstructure, PCBM) and a p-type (Spiro-OMeTAD, copper thiocyanate, or PEDOT.PSS) layers, on both glass and flexible substrates.

Please contact Pi-Soltech team (info@pisoltechnologies.com) to pre-order or for more information.

Performances of PV devices based  on our perovskite inks:
(Measurement in room environment conditions without device encapsulation)
Major advantages of Pi-SOLTECH perovskite technology
01 / COST EFFECTIVE
02 / HIGH PERFORMANCE
The technology uses simple manufacturing processes that are easy to implement.
Application of our products in the fields of photovoltaics and optoelectronics allows to realize effecient devices (20% for solar)
03 / HIGH STABILITY
04 / FULLY AMBIENT-PROCESSING
The stability of perovskite films made from our solutions represents a considerable step forward not only for photovoltaics but also for optoelectronic applications (LEDs, lasers, detectors).
Versatility and compatibility of our process engineering for fabricating devices on flexible substrate and  p−i−n devices under ambient conditions (relative humidity (RH): Up to 65%; temperature: 25−30 °C) without using a glove box. The low temperature
and fully ambient preparation methods make our devices  promising candidates for industrialization.
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info@pisoltechnologies.com

Pi-SOLTECH

355 rue Peel #503

| Montréal (QC) Canada | H3C 2G9

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